| PZT／Si异质结的电特性研究 |
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| 引用本文： | 于军,周文利,曹广军,谢基凡.PZT／Si异质结的电特性研究[J].华中科技大学学报(自然科学版),1996(5). |
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| 作者姓名： | 于军 周文利 曹广军 谢基凡 |
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| 作者单位： | 华中理工大学固体电子学系 |
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| 基金项目： | 国家863高科技计划资助 |
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| 摘 要： | 采用Ｓｏｌ／Ｇｅｌ工艺制备ＰＺＴ／Ｓｉ结构，从该结构的极化特性、开关特性和Ｉ－Ｖ特性等方面研究了硅衬底上铁电薄膜的自偏压异质结特性．并以这种效应分析了ＦＲＡＭ电容中铁电薄膜的疲劳机制．
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| 关 键 词： | 铁电薄膜 自偏压异质结 Sol－Gel工艺 |
Study on Electrical Characteristics of PZT/Si Heterojunction |
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| Yu Jun, Zhou Wenli, Cao Guangjun, Xie Jifan.Study on Electrical Characteristics of PZT/Si Heterojunction[J].JOURNAL OF HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY.NATURE SCIENCE,1996(5). |
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| Authors: | Yu Jun Zhou Wenli Cao Guangjun Xie Jifan |
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| Abstract: | The PZT/Si structure is prepared using the Sol-Gel process. The self-biased heterojunction featurect of the ferroelectric film on silicon substrate is studied through measurement and analysis of the electrical characteristics. Owing to this effect, the P-E hysteresis loop of the structure with n-Sisubstrate structure is seen to be asymmetrical, and the I-V characteristics exhibit a rectifying action as a pn junction with unique switching characteristics. The fatigue phenomenon of the ferroelectric film prepared directly on the bottom electrode in the case of FRAM capacitor exhibits a similar effect. A buffer layer is necessary to improve the characteristics of the boundary between the ferroelectric film and the bottom electrode. |
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| Keywords: | self-biased heterojunction ferroelectric film Sol-Gel process |
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