| 掺硫低位错磷化铟单晶生长和性质 |
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| 引用本文： | 方敦辅,王祥熙,徐涌泉,缪涵英,牟盘健.掺硫低位错磷化铟单晶生长和性质[J].应用科学学报,1983,1(3):235-242. |
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| 作者姓名： | 方敦辅 王祥熙 徐涌泉 缪涵英 牟盘健 |
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| 作者单位： | 中国科学院上海冶金研究所 |
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| 摘 要： | 在高压液封直拉(LEC)法生长InP单晶时,利用杂质效应掺入硫,可以有效地降低位错密度.当载流子浓度达3×1018 cm-3时,位错密度降低到108cm-2左右,此时补偿比在0.1~0.3之间.硫在InP中的有效分配系数为0.68.掺硫InP单晶具有较好的径向及纵向均匀性,这将给稳定器件工艺及提高材料利用率带来好处.
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| 收稿时间： | 1981-12-22 |
THE GROWTH AND CHARACTERICS OF S-DOPED LOW DISLOCATION InP SINGLE CRYSTALS |
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| FANG DUNFU,WANG XIANGXI,XU YONGQUAN,MIAO HANYING,MOU PANJIAN.THE GROWTH AND CHARACTERICS OF S-DOPED LOW DISLOCATION InP SINGLE CRYSTALS[J].Journal of Applied Sciences,1983,1(3):235-242. |
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| Authors: | FANG DUNFU WANG XIANGXI XU YONGQUAN MIAO HANYING MOU PANJIAN |
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| Institution: | Shanghai Institute of Metallurgy, Academia Sinica |
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| Abstract: | Low dislocation InP crystals in a<111>P direction were pulled with a liquid encapsulated Czochralski technique by impurity doping procedure. Grown-in dislocations were diminished when the sulfur or sulfide was doped. The impurity effect on the dislocation density was examined. Dislocation density was obviously decreased when sulfur concentration exceeded 2×1018 cm-3 with compensation ratio in the range of 0.1~0.3. The coefficient of effective distribution of sulfur in InP grown by LEC is 0.68.Since S-doped InP crystals have better radial and longitudinal homogeneity than Sn-doped ones, it will bring about stabilization in device fabrication and improvement in material applicability. |
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