混合介质层类同轴垂直硅通孔的高频性能研究

为了改善T/R组件中2.5 D转接板的高频特性，本文提出一种工艺简单、结构新颖的混合介质层类同轴硅通孔（through silicon via，TSV）结构，对混合介质层类同轴TSV结构的外围TSV数量、TSV直径、混合介质层厚度等参数进行了仿真研究，并与传统同轴TSV的回波损耗、插入损耗、串扰等性能进行对比.结果表明优化后的混合介质层类同轴TSV结构在1~45 GHz频率范围内，具有良好的射频传输性能. 

Study on High Frequency Characterizations of Coaxially Shielded TSV with Mixed Dielectric Layer

To improve high-frequency characteristics of Through Silicon Via (TSV) interposer in T/R modules, a coaxially shielded TSV with mixed dielectric layer was proposed in this paper, involving novel structure and simple fabrication process. The parameters such as the number of ground TSV, the diameter of TSV, and the thickness of the mixed dielectric layer were simulated and optimized. Compared with traditional coaxial TSV, the coaxially shielded TSV with mixed dielectric layer shows excellent RF transmission performance including return loss, insertion loss and crosstalk in 1~45 GHz frequency range.