| 通过改变费米能级钉扎效应制备6H-SiC欧姆接触的特性研究 |
| |
| 引用本文： | 洪根深,廖勇明,廖伟,丁元力,邬瑞彬,刘洪军,龚敏.通过改变费米能级钉扎效应制备6H-SiC欧姆接触的特性研究[J].四川大学学报(自然科学版),2002,39(3):492-494. |
| |
| 作者姓名： | 洪根深 廖勇明 廖伟 丁元力 邬瑞彬 刘洪军 龚敏 |
| |
| 作者单位： | 四川大学物理系,成都,610064 |
| |
| 摘 要： | 作者通过氧化、刻蚀和沸水处理的方法，在n型6H－SiC的C面上制备了线性较好的欧姆接触。作者对C面和Si面的欧姆接触的退火特性进行了比较和研究；并对形成欧姆接触的物理机理进行了讨论，研究了这种欧姆接触在大密度电流下的特性。
|
| 关 键 词： | 6H－SiC 费米能级钉扎 欧姆接触 |
| 文章编号： | 0490-6756(2002)03-0492-03 |
Study of the Characteristics of Ohmic Contacts to 6H-SiC by Changing Fermi Level Pinning |
| |
| HONG Gen shen,LIAO Yong ming,LIAO Wei,DING Yuan li,WU Rui bin,LIU Hong jun,GONG Min.Study of the Characteristics of Ohmic Contacts to 6H-SiC by Changing Fermi Level Pinning[J].Journal of Sichuan University (Natural Science Edition),2002,39(3):492-494. |
| |
| Authors: | HONG Gen shen LIAO Yong ming LIAO Wei DING Yuan li WU Rui bin LIU Hong jun GONG Min |
| |
| Abstract: | Al/n 6H SiC Ohmic contacts on C face have been obtained by the treatments of oxidation,HF etching and immersing in boiling water. The annealing characteristics of Ohmic contacts for Al on C or Si face n 6H SiC were studied. The physical mechanisms were also discussed. The characteristics of Ohmic contacts under large current concentration were studied at the same time. |
| |
| Keywords: | H SiC Fermi level pinning Ohmic contacts |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
