| nc-Si/SiO_2球形量子点的三阶极化率 |
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| 引用本文： | 刘明强,郭震宁,杨小儒.nc-Si/SiO_2球形量子点的三阶极化率[J].华侨大学学报(自然科学版),2009,30(2). |
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| 作者姓名： | 刘明强 郭震宁 杨小儒 |
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| 作者单位： | 华侨大学,信息科学与工程学院,福建,泉州,362021 |
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| 基金项目： | 福建省自然科学基金，国务院侨办科研项目，泉州市科技计划重点项目 |
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| 摘 要： | 在有效质量近似下,采用无限深势阱,理论计算nc-Si/SiO2球形量子点导带中的电子束缚态,并利用紧束缚密度矩阵理论,推导出共振三阶极化率的表达式.通过数值模拟,分析讨论nc-Si/SiO2球形量子点的三阶极化率与量子点半径、入射光子的能量和弛豫相的关系.结果表明,在强受限中,三阶极化率与量子点半径、入射光子能量和弛豫相有着显著的关系.随着量子点半径的增大、入射光子能量的增大和弛豫相的减小,三阶极化率都有不同程度的增强.
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| 关 键 词： | 量子点 无限深势阱 三阶极化率 |
Third-order Nonlinear Susceptibility in a nc-Si/SiO_2 Spherical Quantum Dot |
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| LIU Ming-qiang,GUO Zhen-ning,YANG Xiao-ru.Third-order Nonlinear Susceptibility in a nc-Si/SiO_2 Spherical Quantum Dot[J].Journal of Huaqiao University(Natural Science),2009,30(2). |
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| Authors: | LIU Ming-qiang GUO Zhen-ning YANG Xiao-ru |
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| Institution: | College of Information Science and Engineering;Huaqiao University;Quanzhou 362021;China |
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| Abstract: | Under the effective mass approximation,the electron state is considered to be confined within a nc-Si/SiO2 spherical quantum dot with infinite barrier,and by using the compact density matrix method,the analytic expression for the resonant third-order susceptibilities was derived.According to numerical simulation,the relation of the third-order susceptibilities with quantum dot dimension,incident photo energy and various relaxation rate was discussed.The result shows that the third-order susceptibilities str... |
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| Keywords: | nc-Si/SiO2 |
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