ZnO薄膜的正交实验设计及其分析 |
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引用本文: | 王洛欣,代红丽.ZnO薄膜的正交实验设计及其分析[J].天津理工大学学报,2013(5):54-57. |
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作者姓名: | 王洛欣 代红丽 |
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作者单位: | 天津理工大学电子信息工程学院,天津300384 |
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基金项目: | 天津理工大学青年教师科研育苗基金(LGYM201002). |
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摘 要: | 采用溶胶-凝胶工艺在Si(111)衬底上制备了ZnO薄膜,考虑影响晶体质量的4个因素,应用正交实验法进行了工艺优化;利用X射线衍射仪对薄膜的晶体结构进行了分析讨论.结果表明,当陈化温度50℃、预处理温度200℃、退火温度650℃和Zn2+浓度0.35 mol/L时,ZnO薄膜的C轴择优取向度最高.
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关 键 词: | ZnO薄膜 正交法 晶体结构 |
The orthogonal experimental design and analysis of ZnO films |
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Institution: | WANG Luo-xin, DAI I-Iong-li (School of Electronic Information Engineering, Tianjin University of Technology, Tianjin 300384, China ) |
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Abstract: | ZnO thin films were prepared on Si ( 111 ) substrates by the sol-gel process . Considering four factors affecting the crystal quality, the experiment process was optimized by orthogonal - design ; The crystal structure of the thin films were analyzed by XRD. The results revealed that, when aging temperature 50 ℃, pretreatment temperature 200 ℃, annealing temperature of 650 ℃ and the concentration of Zn^2+ 0.35 mol/L, ZnO thin fihns were prepared highly oriented along c-axis. |
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Keywords: | ZnO thin films orthogonal design crystal structure |
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