一种新型混合晶向积累型圆柱体共包围栅互补金属氧化物场效应晶体管

提出一种新型的工作于积累模式、具有混合晶向的圆柱体共包围栅互补金属氧化物场效应晶体管器件结构. 与目前其他报道的CMOS器件相比, NMOS和PMOS器件沟道具有不同的晶向, 且均有埋层氧化层将其与衬底隔离, 器件结构简单、紧凑, 集成度增加了一倍. 报道了积累型圆柱体全包围栅场效应管器件物理分析、技术仿真结果以及器件制作详细工艺流程. 与其他常规鳍形场效应管器件(FinFET)相比, 由于克服了不对称场的积聚, 如锐角效应导致的漏电, 器件沟道的电完整性得到很大改善. SOI圆柱体全包围栅场效应晶体管在积累工作模式下, 电流流过整个圆柱体, 具备高载流子迁移率, 低低频器件噪声, 并可避免多晶硅栅耗尽及短沟道效应, 增大了器件的阈值电压. 亚10 nm尺寸下, 器件的开/关态电流比值大于10⁶, 表明器件具备良好的性能及进一步按比例缩小的能力. 另外还简单介绍了器件制作工艺流程, 提出的工艺流程具备简单且与常规CMOS工艺流程兼容的特点.

A novel accumulation mode complementary GAAC FinFETs inverter with hybrid orientation SOI substrate

We proposed a novel complementary GAAC FinFETs inverter device structure operating in accumulation mode with hybrid orientation SOI substrate and shared with one gate. Compared with other reported CMOS devices, both of the NMOS and PMOS devices with different channel orientation have buried oxide layer to isolate it from the substrate. The hole mobility is more than doubled on (110) silicon substrate with current flow direction along ?110? compared with conventional (100) substrates. The electron mobility is still the highest on (100) substrates. The device structure is simple, tight-outs and the density of the ICs can be doubled. We also reported our analytical model and TCAD results on gate-all-around cylindrical (GAAC) FinFET with operation based on channel accumulation. The symmetrical nature of field in channel leads to improved electrical characteristics, e.g. reduced leakage current and negligible corner effect. The Ion/Ioff ratio of the device can be larger than 10⁶, as key parameter for device operation. The GAAC FinFET operated in accumulation mode appears a good potential candidate for device scaled down to sub-10 nm.