V型沟槽Si衬底上SrTiO_3薄膜制备

在单晶Si(100)衬底以及经过改型处理的侧壁为Si(110)"V"型沟槽衬底上,分别采用液相沉积(LPD)和射频磁控溅射法(RF magnetron sputtering)制备了SrTiO3(STO)薄膜.通过对沉积溶液的温度、衬底的表面处理方法、衬底的放置方式以及热处理工艺的优化,研究了利用LPD法制备具有较为致密均匀的STO薄膜的条件;通过对溅射功率、溅射气压、衬底温度以及退火温度等具体参数的优化,研究了利用射频磁控溅射法在较低的衬底温度下制备具有一定取向的STO薄膜的条件.结果表明,射频磁控溅射法制备的STO薄膜在结晶状态、择优取向和表面形貌优于液相沉积.

Preparation of SrTiO_3 Thin Films on Si(100) Substrates with V-grooves

SrTiO3(STO) thin films were grown on Si(100) substrates and Si(110) substrates with V-grooves by liquid phase deposition(LPD) and RF magnetron sputtering,respectively.In order to obtain high quality STO films by LPD,the influences of sedimentary solution temperature,substrate surface treatment methods,substrate placement and heat treatment process were investigated.In order to obtain high quality STO films with certain orientation at low substrate temperature by RF magnetron sputtering,the specific paramete...