| 溅射沉积温度对薄膜生长影响的计算机模拟 |
| |
| 引用本文： | 李化鹏,孙大智,于春花,陈希明,杨保和.溅射沉积温度对薄膜生长影响的计算机模拟[J].天津理工大学学报,2007,23(3):21-23. |
| |
| 作者姓名： | 李化鹏 孙大智 于春花 陈希明 杨保和 |
| |
| 作者单位： | 天津理工大学,电子信息与通信工程学院,天津,300191 |
| |
| 基金项目： | 天津市自然科学基金;天津市重点实验室基金 |
| |
| 摘 要： | 利用Monte Carlo方法对薄膜生长过程进行计算机模拟.模型针对粒子的沉积、吸附及粒子的扩散等过程,研究了粒子允许行走的最大步数对薄膜生长形貌的影响.结果表明:随温度升高,粒子行走步数增加,薄膜的生长经历了从分散到分形团聚的过程;在粒子行走步数越小的情况下,薄膜越易趋向于分散生长.
|
| 关 键 词： | Monte Carlo方法 计算机模拟 薄膜生长 分形 |
| 文章编号： | 1673-095X（2007）03-0021-03 |
| 收稿时间： | 2006-09-04 |
| 修稿时间： | 2006-09-04 |
Sputtering deposition temperature-dependent computer simulation of thin film growth |
| |
| LI Hua-peng,SUN Da-zhi,YU Chun-hua,CHEN Xi-ming,YANG Bao-he.Sputtering deposition temperature-dependent computer simulation of thin film growth[J].Journal of Tianjin University of Technology,2007,23(3):21-23. |
| |
| Authors: | LI Hua-peng SUN Da-zhi YU Chun-hua CHEN Xi-ming YANG Bao-he |
| |
| Institution: | School of Electronics Information and Communications Engineering, Tianjin University of Technology, Tianjin 300191, China |
| |
| Abstract: | The growth of thin films was simulated by Monte Carlo method.The processes of particle deposition,adatom diffusion were taken into account in our model.The effects of the maximum steps that a particle was permitted to migrate on the morphology of thin films were investigated.The results show that the films growth undergoes disperse,fractal and conglobating,with the increase of particles migrating steps by increase the temperature.In addition,the less the particles migrating steps,the more easily the particles tend to be in disperse growth. |
| |
| Keywords: | Monte Carlo method computer simulation thin films growth fractal |
| 本文献已被 CNKI 维普 万方数据 等数据库收录！ |
|
