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利用双发光层结构提高N-BDAVBi掺杂器件的效率
引用本文:王福军,汪津,张会萍,姜文龙. 利用双发光层结构提高N-BDAVBi掺杂器件的效率[J]. 吉林师范大学学报(自然科学版), 2014, 0(4): 32-35
作者姓名:王福军  汪津  张会萍  姜文龙
作者单位:吉林师范大学 信息技术学院,吉林 四平,136000
基金项目:吉林省科技发展项目,吉林省教育厅“十二五“科学技术研究项目
摘    要:制备了基于N-BDAVBi的高效率双发光层蓝色有机电致发光器件(OLED),器件中将蓝色荧光染料NBDAVBi作为客体发光材料分别掺入主体材料TCTA和TPBi中,器件结构为ITO/m-MTDATA(40 nm)/NPB(10nm)/TCTA:N-BDAVBi(15 nm)/TPBi:N-BDAVBi(15 nm)/TPBi(30 nm)/LiF(0.6 nm)/Al(150 nm),最大电流效率达到8.44 cd/A,CIE色坐标为(0.176,0.314),并且在12 V的电压下,亮度最大达到11 860 cd/m2,分别是单发光层结构器件的1.85倍和1.2倍.器件性能提高主要归因于双发光层扩大了载流子复合区域,主客体间的Forster能量转移.

关 键 词:双发光层  效率  有机电致发光器件

Using Double Emission Layers Structure to Improve the Efficiency of N-BDAVBi Doped Devices
WANG Fu-jun,WANG Jin,ZHANG Hui-ping,JIANG Wen-long. Using Double Emission Layers Structure to Improve the Efficiency of N-BDAVBi Doped Devices[J]. Jilin Normal University Journal(Natural Science Edition), 2014, 0(4): 32-35
Authors:WANG Fu-jun  WANG Jin  ZHANG Hui-ping  JIANG Wen-long
Affiliation:(College of Information and Technology,Jilin Normal University, Siping 136000, China)
Abstract:The high-efficiency and double emitting layers blue light emitting devices was fabricated in the paper. In this device,blue fluorescent material N-BDAVBi was guest which was doped into two host material of TCTA and TPBi. The device structure included indium tin oxide glass(ITO)/ m-MTDATA(40 nm)/ NPB(10 nm)/TCTA:N-BDAVBi(15 nm)/ TPBi:N-BDAVBi(15 nm)/ TPBi(30 nm)/ LiF(0. 6 nm)/ Al(150 nm). The maximum luminance efficiency was 8. 44 cd / A,which was 1. 85 times and 1. 2 times of the single light-emitting layer structure devices. CIE colour was(0. 176,0. 314). The maximum luminance of more than 20 620 cd / m2 had been achieved at 12 V. The reason of high capability was the expansion of the recombination zone in double emission layers structure,and fully Forster energy transfer in blue OLEDs.
Keywords:double emitting layers  efficiency  OLED
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