| 微波MESFET上变频器 |
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| 引用本文： | 张锦卫,冯立民.微波MESFET上变频器[J].东南大学学报(自然科学版),1996,26(5):124-130. |
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| 作者姓名： | 张锦卫 冯立民 |
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| 作者单位： | 东南大学无线电工程系，浙江省金华市邮电局 |
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| 摘 要： | 微波ＭＥＳＦＥＴ上变频器张锦卫＊冯立民苗敬峰（东南大学无线电工程系，南京２１００１８）随着微波ＦＥＴ的迅速发展，微波场效应管上变频器的研究引起了人们的兴趣．１９８０年Ａｂｌａｓｓｍｅｉｅｒ等人利用ＧａＡｓＭＥＳＦＥＴ制作了频率较低的上变频器［１］，...
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| 关 键 词： | MESFET 变频器 场效应器件 微波 |
Microwave MESFET Up Converter |
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| Zhang Jinwei,Feng Limin,Miao Jingfeng.Microwave MESFET Up Converter[J].Journal of Southeast University(Natural Science Edition),1996,26(5):124-130. |
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| Authors: | Zhang Jinwei Feng Limin Miao Jingfeng |
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| Abstract: | The theoretical analysis and calculation of GaAs MESFET up converter is presented by using transfer matrix method. The influences of load impedance on each port of network and local oscillator power on conversion gain of up converter are discussed. Then, the X bard up converter is manufactured with spurious contents less then -58 dB within the 800 MHz passband, and -50 dB outside of the passband. This up converter can be applied in practice. |
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| Keywords: | microware up converter transfer matrix method |
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