| 磁阻式与霍尔式接近开关性能比较 |
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| 引用本文： | 秦玉伟,张莹. 磁阻式与霍尔式接近开关性能比较[J]. 河南科学, 2011, 29(5): 595-597 |
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| 作者姓名： | 秦玉伟 张莹 |
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| 作者单位： | 渭南师范学院物理与电子工程系,陕西,渭南,714000 |
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| 基金项目： | 渭南师范学院研究生专项 |
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| 摘 要： | 介绍了磁阻式接近开关和霍尔式接近开关的工作原理及信号处理电路,并对二者的动态特性进行了测量和分析.实验表明:磁阻式接近开关动态特性优于霍尔式接近开关,该接近开关灵敏度高,稳定性好,且成本低,可替代霍尔式接近开关,用于铁磁性材料检测和控制.
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| 关 键 词： | 接近开关 传感器 磁敏电阻 锑化铟 霍尔效应 |
Performance Comparison between Magneto-Resistive and Hall Proximity Switches |
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| Qin Yuwei,Zhang Ying. Performance Comparison between Magneto-Resistive and Hall Proximity Switches[J]. Henan Science, 2011, 29(5): 595-597 |
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| Authors: | Qin Yuwei Zhang Ying |
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| Affiliation: | (Department of Physics and Electronic Engineering,Weinan Teachers University,Weinan 714000,Shaanxi China) |
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| Abstract: | The working principle and signal processing circuit of magnetoresistive proximity switch and Hall proximity switch were introduced.The dynamic characteristics of the proximity switches were measured and analyzed.The experiment shows that the dynamic characteristics of the magnetoresistive proximity switch are superior to Hall proximity switch with high sensitivity,favorable stability and low cost.It can be used to substitute for Hall proximity switch for ferromagnetic material detecting and controlling. |
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| Keywords: | proximity switch sensor magneto-resistance lndium-antimonide(InSb) Hall effect |
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