阳极腐蚀条件及单晶硅类型对多孔硅光致发光性能的影响

研究了阳极腐蚀条件及单晶硅的导电类型和掺杂原子浓度等多多孔硅微结构与室温可见区光致发光性能的影响。结果表明，延长腐蚀时间、提高电流密度降低腐蚀液中氢氟酸浓度，都能引起多孔硅发光波长蓝移，发光强度的变化则较复杂；由轻掺杂硅制备的多孔硅不仅发光效率高，而且波长蓝移，硅片导电类型多孔硅发光的影响不显著，这些结果可根据量子限制疚与多孔硅的形成机制来解释。

Effects of Anodization Conditions and Types of Crystalline Silicon on Photoluminescence of Porous Silicon

The dependence of room temperature visible photoluminescence (PL) of porous silicon (PS) and its microstructure on the anodization conditions and conductivity types and the doping level of the substrate was studied systematically. The results showed that the increase of etching time and current density, and the decrease of HF concentration in etching solution resulted in a blue shift of luminescent wavelength and a complicated change of PL intensity of PS. The luminescence efficiency of n-PS (fabricated with lightly doped n-Si) was higher than that of n -PS, and the wavelength of the former was shorter. And conductivity types of the substrate had no distinct effect on the luminescence of PS. All the results were explained with the quantum confinement effect and the formation mechanism of PS.