GaAs／GaAlAs透射阴极量子效率相关参量分析

从半导体电子发射的三阶模型和扩散方程出发,讨论了ＧａＡｓ／ＧａＡｌＡｓ透射式ＮＥＡ光阴极量子效率与几种在工艺上重要的参量如电子扩散长度,阴极厚度,后界面复合速度等的关系,特别地,从工艺需求的角度出发,探讨了这种阴极在前照明和后照明的情况下,两量子效率之间的关系。

Analyses on Parameters Related with Quantum Efficiencies of GaAs/GaAlAs Transmission Mode Photocathodes

On the basis of"three steps model"and "diffusion equation",the author discusses the dependence of quantum efficincies for GaAs/GaAlAs transmission mode photocathodes on some parameters such as electron diffusion length,interface recombination velocity and photocathode layer thickness,which are important for the fabrication of the photocathodes.Especially,the relation between the quantum efficiency under front illumination and that under back iliumination is also explored for the requirement of the present fabrication processes of the photocathodes.Hence,theoretical basis is founded for estimating the quantum efficiency under back illumination according to that under front illumination.