| 高压VDMOSFET的最佳设计 |
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| 引用本文： | 王中文. 高压VDMOSFET的最佳设计[J]. 辽宁大学学报(自然科学版), 2004, 31(4): 367-370 |
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| 作者姓名： | 王中文 |
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| 作者单位： | 辽宁大学,物理系,辽宁,沈阳,110036 |
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| 摘 要： | 介绍了功率VDMOSFET导通电阻的模型,重点讨论了PW与PT对特征导通电阻RonA的影响,经过大量的理论计算,给出了击穿电压为500V,TOX与RonA的关系曲线.首次提出RonA与PW/PT有最佳比例关系.
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| 关 键 词： | 功率VDMOSFET 导通电阻 特征电阻 单胞 |
| 文章编号： | 1000-5846(2004)04-0367-04 |
The Optimally Design of High-Voltage VDMOSFET |
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| WANG Zhong-wen. The Optimally Design of High-Voltage VDMOSFET[J]. Journal of Liaoning University(Natural Sciences Edition), 2004, 31(4): 367-370 |
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| Authors: | WANG Zhong-wen |
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| Abstract: | In this paper the on resistance model of power VDMOSFET is introduced. The effects of wideness P w and P T on special on-state resistance R onA are discussed in detail. After a number of theoretical caculations, the curve of relationship of T OX and R onA is obtained when BV DS =500 V. The relationship of optimal cell dimensions and P W/P T are also first presented. |
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| Keywords: | Power VDMOSFET on-state resistance special resistance cell. |
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