| Co掺杂对Zn1-xCoxO稀磁半导体光学性质的影响 |
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| 引用本文： | 郑勇平,张志城,卢宇,黄志南,赖发春,黄志高. Co掺杂对Zn1-xCoxO稀磁半导体光学性质的影响[J]. 福建师范大学学报(自然科学版), 2007, 23(5): 50-53 |
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| 作者姓名： | 郑勇平 张志城 卢宇 黄志南 赖发春 黄志高 |
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| 作者单位： | 福建师范大学物理与光电信息科技学院,福建,福州,350007 |
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| 基金项目： | 国家自然科学基金 , 福建省自然科学基金 |
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| 摘 要： | 溶胶-凝胶法制备了Co掺杂的ZnO基稀磁半导体,研究其粉体和薄膜的结构和光学特性.X射线衍射结果表明Co2 随机替代Zn2 位置进入ZnO晶格,并引起晶格常数的变化.紫外-可见透射光谱表明样品的禁带宽度随着Co掺杂浓度的增大呈现非单调变化规律,低浓度掺杂样品的光学带隙随掺杂浓度增大而减小(红移),这是由于Co2 替代Zn2 ,局域d电子与能带电子之间的sp-d交换耦合引起的.
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| 关 键 词： | 稀磁半导体 ZnO 溶胶-凝胶法 透射光谱 禁带宽度 |
| 文章编号： | 1000-5277（2007）05-0050-04 |
| 修稿时间： | 2006-12-20 |
Effects of Co Doping on the Optical Properties of Zn1-xCoxO Diluted Magnetic Semiconductors |
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| ZHENG Yong-ping,ZHANG Zhi-cheng,LU Yu,HUANG Zhi-nan,LAI Fa-chun,HUANG Zhi-gao. Effects of Co Doping on the Optical Properties of Zn1-xCoxO Diluted Magnetic Semiconductors[J]. Journal of Fujian Teachers University(Natural Science), 2007, 23(5): 50-53 |
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| Authors: | ZHENG Yong-ping ZHANG Zhi-cheng LU Yu HUANG Zhi-nan LAI Fa-chun HUANG Zhi-gao |
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| Affiliation: | School of Physics and Opticalelectronics Technology, Fujian Nomal University, FuZhou 350007, China |
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| Abstract: | Co doped ZnO-based diluted magnetic semiconductors were prepared by sol-gel method.The structural and optical properties of power and thin film samples were investigated.X-ray diffraction(XRD) patterns show that Co2 ions have substituted the Zn2 ions into ZnO lattice,which results in the changes of lattice constants.The transmission spectra in ultraviolet-visible region indicate that the Co doping has lead to the non-monotonic variation of band gap. The decrease of band gap as Co dopant increases(redshift) for low concentration is attributed to sp-d exchange interaction between located d electrons of Co2 ions substituting the Zn2 ions and the band electrons of the materials. |
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| Keywords: | diluted magnetic semiconductors ZnO sol-gel method transmission spectra band gap |
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