| NM/FS1/FS2/NM结的隧穿电导和隧穿磁电阻 |
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| 引用本文： | 唐科,黄劲松,朱林,谢征微,李玲. NM/FS1/FS2/NM结的隧穿电导和隧穿磁电阻[J]. 四川师范大学学报(自然科学版), 2008, 31(6) |
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| 作者姓名： | 唐科 黄劲松 朱林 谢征微 李玲 |
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| 作者单位： | 四川师范大学,物理与电子工程学院,四川,成都,610066 |
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| 摘 要： | 利用平均场近似和转移矩阵方法,对NM/FS1/FS2/NM结(NM为非磁金属,FS1和FS2为铁磁半导体层)的隧穿磁电阻(TMR)与FS层厚度及Rashba自旋轨道耦合的关系进行了研究.结果表明NM/FS1/FS2/NM结中TMR值随半导体层厚度的改变发生周期性变化,选择适当的半导体层的厚度和Rashba自旋轨道耦合系数可以得到大的TMR值.
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| 关 键 词： | 隧穿磁电阻 铁磁半导体 Rashba耦合 |
The Tunnel Conductance and Tunnel Magnetic Resistance in NM/FS1/FS2/NM Junction |
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| TANG Ke,HUANG Jin-song,ZHU Lin,XIE Zheng-wei,LI Ling. The Tunnel Conductance and Tunnel Magnetic Resistance in NM/FS1/FS2/NM Junction[J]. Journal of Sichuan Normal University(Natural Science), 2008, 31(6) |
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| Authors: | TANG Ke HUANG Jin-song ZHU Lin XIE Zheng-wei LI Ling |
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| Abstract: | On the basis of mean-field theory and transfer matrices,the changes of the tunnel magnetic resistance(TMR) in NM/FS1/FS2/NM junction(NM stands for nonmagnetic metal,FS1 and FS2 stand for the ferromagnetic semiconductor layers) with the thickness of FS and the coefficient of Rashba spin-orbital coupling are studied.The results show that the TMR in NM/FS1/FS2/NM junction can oscillate periodically with the thickness variation of semiconductor layer and the large TMR value can be obtained with the suitable layer thickness of semiconductor layer and the Rashba spin-orbital coupling coefficients. |
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| Keywords: | Tunnel magnetic resistance Ferromagnetic semiconductor Rashba coupling |
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