| OTS修饰的酞菁锌薄膜晶体管 |
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| 引用本文： | 白钰,范东华,徐维,王忆.OTS修饰的酞菁锌薄膜晶体管[J].五邑大学学报(自然科学版),2010,24(2):19-23. |
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| 作者姓名： | 白钰 范东华 徐维 王忆 |
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| 作者单位： | 五邑大学,应用物理与材料学院,广东,江门,529020 |
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| 摘 要： | 制备并提纯了酞菁锌(ZnPc)有机场效应晶体管,该薄膜器件以具有大π键的ZnPc作为载流子传输有源层,以自制的热生长SiO2膜层作为晶体管的栅绝缘层,经长链两亲分子十八烷基三氯硅烷(OTS)修饰以后,具有复合双绝缘层的结构.测试结果显示:以此为基础制备的器件具有良好的I-V输出特性,OTS/SiO2复合双绝缘层的器件结构能有效改进有机薄膜晶体管的性能.
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| 关 键 词： | 酞菁锌 十八烷基三氯硅烷 有机薄膜晶体管 |
A Study of OTS-modified Zinc Phthalocyanine Thin Film Transistors |
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| BAI Yu,FAN Dong-hua,XU Wei,WANG Yi.A Study of OTS-modified Zinc Phthalocyanine Thin Film Transistors[J].Journal of Wuyi University(Natural Science Edition),2010,24(2):19-23. |
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| Authors: | BAI Yu FAN Dong-hua XU Wei WANG Yi |
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| Institution: | BAI Yu,FAN Dong-hua,XU Wei,WANG Yi(School of Applied Physics & Materials Engineering,Wuyi University,Jiangmen 529020,China) |
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| Abstract: | A zinc phthalocyanine（ZnPc） organic field-effect transistor is prepared,which has a large π bond of zinc phthalocyanine as the transporting active layer,and thermal SiO2 films as transistor gate insulating layer.After modified by long-chain amphiphile octadecyltrichlorosilane（OTS）,the device has the structure of a double-layer insulator.The results indicate that the device has good output characteristic curves and shows that OTS/SiO2 composite double-insulating layer device can effectively improve the performance of organic thin-film transistors. |
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| Keywords: | zinc phthalocyanine OTS organic thin-film transistors |
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