| 水平排列硅光二极管色传感器及其特性 |
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| 引用本文： | 阮刚 Otto,T. 水平排列硅光二极管色传感器及其特性[J]. 复旦学报(自然科学版), 1997, 36(3): 263-267 |
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| 作者姓名： | 阮刚 Otto T |
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| 作者单位： | 复旦大学电子工程系!上海，200433(阮刚)，TechnicalUniversityofChemnitz-Zwickau(T.Otto，U.Fritzsch，C.Radehaus) |
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| 基金项目： | 复旦大学和Technical University of Chemnitz-Zwickau合作研究课题 |
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| 摘 要： | 简要介绍水平排列硅光二极管色传感器的制作工艺，该器件波长在５００ｎｍ到６５０ｎｍ范围内有一个单调的近于线性的光谱响应。入射光波长为６００ｎｍ时，入射光强度化五个数量级，测出的波长基本不变，器件波长分辨率、最低入射光强、长时间测量的波长漂移以及波长温漂系数等特性的测量结果表明：该类色传感器已达高性能实用要求。
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| 关 键 词： | 色传感器 硅光二极管 HRCS 工作原理 传感器 |
Colour sensor based on horizontal arranged silicon photodiodes and its characteristics |
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| Ruan Gang,T. Otto,U. Fritzseh,C. Radehaus. Colour sensor based on horizontal arranged silicon photodiodes and its characteristics[J]. Journal of Fudan University(Natural Science), 1997, 36(3): 263-267 |
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| Authors: | Ruan Gang T. Otto U. Fritzseh C. Radehaus |
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| Abstract: | The proceed for the colour sensor based on horizontal arranged silicon photodiodesis introduced briefly.This kind of colour sensor has a monotonously spectral response in thewave length range from 500 urn to 650 urn with an almost linear response. The measuredwave length is basically constant with the change of illumination intensity in five order of magenitude. The measured results which include the wave length resolution of device,the lowestillumination intensity,the wave length drift in long term measurement and the wave lengthtemperature drift coefficient show that this kind of colour sensor has high performence andmeet the practical requirements. |
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| Keywords: | colour sensor silicon photodiode |
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