Top-gated graphene field-effect transistors on SiC substrates |
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Authors: | Peng Ma Zhi Jin JianNan Guo HongLiang Pan XinYu Liu TianChun Ye YuPing Jia LiWei Guo XiaoLong Chen |
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Affiliation: | 1. Department of Microwave IC, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China 2. Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
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Abstract: | We report on a demonstration of top-gated graphene field-effect transistors(FETs) fabricated on epitaxial SiC substrate.Composite stacks,benzocyclobutene and atomic layer deposition Al2O3,are used as the gate dielectrics to maintain intrinsic carrier mobility of graphene.All graphene FETs exhibit n-type transistor characteristics and the drain current is nearly linear dependence on gate and drain voltages.Despite a low field-effect mobility of 40 cm2/(V s),a maximum cutoff frequency of 4.6 GHz and a maximum oscillation frequency of 1.5 GHz were obtained for the graphene devices with a gate length of 1 μm. |
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Keywords: | graphene radio frequency(RF) field-effect transistor(FET) SiC |
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