| 电子辐照直拉硅退火后辐照施主行为的研究 |
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| 引用本文： | 蔡莉莉,冯翠菊,张金锋.电子辐照直拉硅退火后辐照施主行为的研究[J].宁夏大学学报(自然科学版),2009,30(2):132-134. |
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| 作者姓名： | 蔡莉莉 冯翠菊 张金锋 |
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| 作者单位： | 1. 华北科技学院,基础部,北京东燕郊,101601
2. 淮北煤炭师范学院,物理与电子信息学院,安徽,淮北,235000 |
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| 基金项目： | 国家自然科学基金资助项目，河北省自然科学基金资助项目 |
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| 摘 要： | 利用多种实验手段对电子辐照直拉硅退火过程中辐照缺陷的施主效应进行了研究，同时探讨了不同辐照剂量、初始氧含量以及预处理对辐照施主形成的影响．实验结果表明，电子辐照直拉硅后其电阻率迅速增加，低温退火即可恢复真实值；辐照施主是氧施主一缺陷的复合体，其激活温度在750℃左右，低温预处理有助于辐照施主的异质形核．
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| 关 键 词： | 电子辐照 辐照缺陷 施主浓度 电阻率 |
Behavior of Irradiation Donor After Annealing in Electron Irradiated CZ-Si |
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| Cai Lili,Feng Cuiju,Zhang Jinfeng.Behavior of Irradiation Donor After Annealing in Electron Irradiated CZ-Si[J].Journal of Ningxia University(Natural Science Edition),2009,30(2):132-134. |
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| Authors: | Cai Lili Feng Cuiju Zhang Jinfeng |
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| Institution: | 1.Foundation Department;North China Institute of Science and Technology;Yanjiao Beijing-East 101601;China;2.School of Physics and Electrical Information Engineering;Huaibei Coal Industry Teachers College;Huaibei 235000;China |
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| Abstract: | Behavior of the irradiation donor(ID) after annealing in electron irradiated CZ-Si has been studied by using various kinds of experimental means.The effect of electron doses,original oxygen concentration and preannealing on the ID formation is also discussed.It is shown that the resistivity increase sharply after electron irradiated and recovere real value in irradiated samples annealed at low temperature.It is considered that the structure of ID is the oxygen donor defect complex which is activated at 750 ... |
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| Keywords: | electron irradiation irradiation defects donor concentration resistivity |
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