| LPCVD氮化硅薄膜的制备工艺 |
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| 引用本文： | 冯海玉,黄元庆,冯勇健.LPCVD氮化硅薄膜的制备工艺[J].厦门大学学报(自然科学版),2004,43(Z1):362-364. |
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| 作者姓名： | 冯海玉 黄元庆 冯勇健 |
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| 作者单位： | 1. 厦门大学机电工程
2. 厦门大学萨本栋微机电研究中心,福建,厦门,361005 |
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| 摘 要： | 氮化硅(Si3N4)薄膜具有许多优良特性,在半导体、微电子和MEMS领域应用广泛.简要介绍了Si3N4膜的制备方法及CVD法制备的Si3N4薄膜的特性,详细介绍了低压化学气相淀积(LPCVD)氮化硅的工艺.通过调整炉温使批量生产的淀积膜的均匀性达到技术要求.
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| 关 键 词： | 氮化硅薄膜 低压化学气相淀积 温度 |
| 文章编号： | 0438-0479(2004)S-362-03 |
| 修稿时间： | 2003年3月26日 |
Preparation Technologies of LPCVD Silicon Nitride Films |
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| FENG Hai-yu,HUANG Yuan-qing,FENG Yong-jian.Preparation Technologies of LPCVD Silicon Nitride Films[J].Journal of Xiamen University(Natural Science),2004,43(Z1):362-364. |
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| Authors: | FENG Hai-yu HUANG Yuan-qing FENG Yong-jian |
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| Institution: | FENG Hai-yu~1,HUANG Yuan-qing~1,FENG Yong-jian~2 |
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| Abstract: | Silicon nitride (Si_3N_4)films are widely used in the fields of semiconductor,microelectronics and MEMS with their excellent advantages.This paper introduced the preparation technologies and properties of CVD for Si_3N_4 films and the process of low pressure chemical vapor deposition(LPCVD).The thickness uniformity of films has been demonstrated on a batch LPCVD furnace platform by adjusting the process temperature. |
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| Keywords: | Silicon Nitride Films LPCVD temperature |
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