Wafer-scale graphene on 2 inch SiC with uniform structural and electrical characteristics |
| |
Authors: | YuPing Jia LiWei Guo JingJing Lin LianLian Chen XiaoLong Chen |
| |
Institution: | 1. Research & Development Center for Functional Crystals, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
|
| |
Abstract: | Wafer-scale graphene on SiC with uniform structural and electrical features is needed to realize graphene-based radio frequency devices and integrated circuits.Here,a continuous bi/trilayer of graphene with uniform structural and electrical features was grown on 2 inch 6H-SiC (0001) by etching before and after graphene growth.Optical and atomic force microscopy images indicate the surface morphology of graphene is uniform over the 2 inch wafer.Raman and transmittance spectra confirmed that its layer number was also uniform.Contactless resistance measurements indicated the average graphene sheet resistance was 720 /with a non-uniformity of 7.2%.Large area contactless mobility measurements gave a carrier mobility of about 450 cm2 /(V s) with an electron concentration of about 1.5×10 13 cm2.To our knowledge,such homogeneous morphology and resistance on wafer scale are among the best results reported for wafer-scale graphene on SiC. |
| |
Keywords: | graphene wafer scale resistivity mobility morphology |
本文献已被 CNKI SpringerLink 等数据库收录! |