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Room-temperature ferromagnetic nanotubes controlled by electron or hole doping
Authors:Krusin-Elbaum L  Newns D M  Zeng H  Derycke V  Sun J Z  Sandstrom R
Affiliation:IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598, USA. krusin@us.ibm.com
Abstract:Nanotubes and nanowires with both elemental (carbon or silicon) and multi-element compositions (such as compound semiconductors or oxides), and exhibiting electronic properties ranging from metallic to semiconducting, are being extensively investigated for use in device structures designed to control electron charge. However, another important degree of freedom--electron spin, the control of which underlies the operation of 'spintronic' devices--has been much less explored. This is probably due to the relative paucity of nanometre-scale ferromagnetic building blocks (in which electron spins are naturally aligned) from which spin-polarized electrons can be injected. Here we describe nanotubes of vanadium oxide (VO(x)), formed by controllable self-assembly, that are ferromagnetic at room temperature. The as-formed nanotubes are transformed from spin-frustrated semiconductors to ferromagnets by doping with either electrons or holes, potentially offering a route to spin control in nanotube-based heterostructures.
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