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| 静电放电电磁脉冲对微电子器件的双重作用 | |
| 引用本文： | 祁树锋,张晓倩,曾泰,刘红兵,杨洁.静电放电电磁脉冲对微电子器件的双重作用[J].河北师范大学学报(自然科学版),2011,35(6). |
| 作者姓名： | 祁树锋 张晓倩 曾泰 刘红兵 杨洁 |
| 作者单位： | 1. 第二炮兵工程学院六系,陕西西安,710025 2. 太原卫星发射中心,山西太原,030000 3. 空军雷达学院二系,湖北武汉,430010 4. 中国电子科技集团第13研究所,河北石家庄,050051 5. 军械工程学院静电与电磁防护研究所,河北石家庄,050003 |
| 基金项目： | 国家自然科学基金(50237040); 面上项目(60671044) |
| 摘 要： | 研究了低电压的静电放电(ESD)对微电子器件造成的潜在性失效,采用人体模型(HBM)对微波低噪声晶体管2SC3356施加不同电压的ESD应力.结果表明:高电压的ESD注入对2SC3356器件造成的损伤主要是不可恢复的损伤,而低电压的ESD注入对2SC3356器件造成的损伤是可恢复的损伤;ESD的注入对器件有双重作用:一方面ESD在器件中可引入潜在性损伤,另一方面ESD对器件有加固作用,并且注入ESD电压越高,这些作用越明显. |
| 关 键 词： | ESD 微电子器件 潜在性失效 |
The Dual Effects of ESP EMP on Microelectronic Device |
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| QI Shufeng,ZHANG Xiaoqian,ZENG Tai,LIU Hongbing,YANG Jie.The Dual Effects of ESP EMP on Microelectronic Device[J].Journal of Hebei Normal University,2011,35(6). | |
| Authors: | QI Shufeng ZHANG Xiaoqian ZENG Tai LIU Hongbing YANG Jie |
| Institution: | QI Shufeng1,ZHANG Xiaoqian2,ZENG Tai3,LIU Hongbing4,YANG Jie5(1.The 6th Department,Second Artillery Engineering University,Shaanxi Xi'an 710025,China,2.Taiyuan Satellites Launch Center,Shanxi Taiyuan 030000,3.2nd Department,Air Radar University,Hubei Wuhan 430010,4.The 13th Research Institute,China Electron Scientific and Technical Group,Hebei Shijiazhuang 050051 China,5.Electrostatic and Microelectronic Protection Research Institute,Shijiazhuang Ordnance Engineering College,Hebei Shijiazhuang 0... |
| Abstract: | A latent failure of microelectric device caused by the low-level electrostatic discharge(ESD) is studied.A series of different low-level ESD stresses are imposed on microwave low noise transistor 2SC3356 using the human body model(HBM).It is shown that the harm of 2SC3356 device caused by high-voltage ESD is mainly unrecoverable harm.However the harm of 2SC3356 device caused by low-voltage ESD is recoverable harm.At the same time,it is found that ESD infusion has dual function to the device:the ESD can lead... |
| Keywords: | ESD microelectronic device latent failure |
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