Abstract: | a new phosphor Gd 3 Ga 5 O 12 :Ag was prepared with sintering through different periods under different temperature. The structure of the phosphor was investigated by X-ray diffraction. The Gd 3 Ga 5 O 12 :Ag thin film was deposited by electron beam evaporation. Photoluminescence (PL) and electroluminescence (EL) were investigated on the devices. The luminance of the TFEL device is about 2 cd/m 2 at 30V above the threshold at a sinusoidal frequency of 1000Hz. |