| 扩散应力的测量及消除 |
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| 引用本文： | 黄岚 赵寿南. 扩散应力的测量及消除[J]. 华南理工大学学报(自然科学版), 1994, 22(1): 11-16 |
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| 作者姓名： | 黄岚 赵寿南 |
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| 作者单位： | 华南理工大学应用物理系 |
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| 摘 要： | 本文采用光弹力学中的Ｓｅｎａｒｍｏｎｔ补偿法，用红外光弹仪测量并分析了单面扩散、双面扩散工艺在硅衬底中引入应力的分布规律及产生机理。研究了双源补偿扩散法掺杂技术消除应力的可行性及工艺条件。
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| 关 键 词： | 硅 应力 扩散 光弹性 |
MEASUREMENT AND ELIMINATION OF DIFFUSION STRESS |
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| Huang Lan, Zhao Shounan, Zhu Zhonghua, Pan Yongxiong. MEASUREMENT AND ELIMINATION OF DIFFUSION STRESS[J]. Journal of South China University of Technology(Natural Science Edition), 1994, 22(1): 11-16 |
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| Authors: | Huang Lan Zhao Shounan Zhu Zhonghua Pan Yongxiong |
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| Abstract: | With the help of infrared. laser photodriticity system, the distributionsof diffusion stress in one-side and two-side diffused silicon samples are measured by Senarmont's compensation method of photoeboticity. The mechanismresponsible for diffusion stress is analyed. It is studied how to decline andfinally eliminate the diffusion stress, based on .the process of double-inpuritycompensation diffusion method. |
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| Keywords: | s: silicon stresses diffusion photoelasticity |
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