一种高压大电流半导体放电管的研究

针对常规半导体放电管在超大浪涌电流作用下,易局部过热而损坏这一问题,采用镓闭管扩散代替硼扩散、台面工艺解决二氧化硅不能掩蔽镓扩散所带来的问题、玻璃钝化工艺实现高压结面保护等方法。实验结果表明,通过镓扩散、台面刻槽、玻璃钝化和钛镍银多层金属化等工艺,提高了放电管的启动保护电压和最大浪涌电流,其最大浪涌电流达到6 kA,比设计值5 kA提高了20%。

A high-voltage and high-current semiconductor arresters

In this paper, in order to solve the problem that the traditional arrester is easy to be damaged due to partial over-heating when the arrester works with a high surge current, gallium is used instead of boron under closed ampoule vacuum diffusion; mesa technology is used to solve the problem caused by gallium diffusion which cannot be masked by silicon dioxide; glass passivation technology is used to protect junction surface under high voltage. Experimental results show that technologies including gallium diffusion, mesa technology, glass passivation, and titanium nickel silver multilayer metallization, definitely improved the break over voltage and the maximum transient surge current of semiconductor arresters. More specifically, the maximum transient surge current reaches 6 kA which is 20% higher than the design value 5 kA.