| 半绝缘砷化镓中0.77eV荧光带的研究 |
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| 引用本文： | 翁渝民,刘松.半绝缘砷化镓中0.77eV荧光带的研究[J].复旦学报(自然科学版),1992,31(3):270-275. |
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| 作者姓名： | 翁渝民 刘松 |
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| 作者单位： | 复旦大学材料科学研究所
(翁渝民)，材复旦大学料科学研究所
(刘松)，复旦大学材料科学研究所(宗祥福) |
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| 摘 要： |
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| 关 键 词： | 光致发光 半绝缘体 砷化镓 |
PHOTOLUMINESCENCE STUDY ON 0.77 eV EMISSION BAND OF SEMI-INSULATING GaAs |
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| Weng Yumin,Liu Song,Zong Xiangfu.PHOTOLUMINESCENCE STUDY ON 0.77 eV EMISSION BAND OF SEMI-INSULATING GaAs[J].Journal of Fudan University(Natural Science),1992,31(3):270-275. |
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| Authors: | Weng Yumin Liu Song Zong Xiangfu |
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| Institution: | Institute of Materials Science |
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| Abstract: | A first observation of the As_(Ga) related 0.77eV photoluminescence (PL)band at room temperature was reported. A PL investigation on As antisite defects in electron-irradiated GaAs was also presented for the first time. Unlike previous studies, the results show that EL2 is not created during electron-irradiation and the As_(Ga) antisite defect does not have photoquenching effect. No energy transition between EL2 and As_(Ga) defects is observed in electron-irradiation and photoquenching process. Evidence has been found indicating As_(Ga) to be a killer center for bandedge emission. |
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| Keywords: | photoluminescence semi-insulators semi-insulating GaAs AsGa |
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