首页 | 本学科首页   官方微博 | 高级检索  
     检索      

反应溅射Nb-Si-N薄膜的微结构与力学性能
引用本文:刘艳,董云杉,戴嘉维,李戈扬.反应溅射Nb-Si-N薄膜的微结构与力学性能[J].上海交通大学学报,2006,40(10):1763-1766.
作者姓名:刘艳  董云杉  戴嘉维  李戈扬
作者单位:1. 上海交通大学,金属基复合材料国家重点实验室,上海,200030
2. 上海交通大学,高温材料与高温测试教育部重点实验室,上海,200030
摘    要:在Ar、N2和SiH4混合气体中,通过反应磁控溅射方法制备了一系列不同Si含量的Nb-Si-N复合薄膜,采用EDS、XRD、TEM、AFM和微力学探针表征了复合薄膜的成分、相组成、微结构和力学性能.结果表明,采用反应磁控溅射技术通过控制混合气体中SiH4分压可以方便地获得不同Si含量的Nb-Si-N薄膜.少量Si的加入使薄膜得到强化,并在Si含量为3.4%时达到硬度和弹性模量的最高值,分别为53 GPa和521 GPa.进一步增加Si含量,薄膜的硬度和弹性模量逐步降低.Nb-Si-N薄膜力学性能的提高与其晶体缺陷的增加有关.

关 键 词:Nb-Si-N薄膜  反应溅射  微结构  力学性能
文章编号:1006-2467(2006)10-1763-04
修稿时间:2005年9月15日

The Microstructure and Mechanical Properties of Nb-Si-N Films Prepared by Reactive Sputtering
LIU Yan,DONG Yun-shan,DAI Jia-wei,LI Ge-yang.The Microstructure and Mechanical Properties of Nb-Si-N Films Prepared by Reactive Sputtering[J].Journal of Shanghai Jiaotong University,2006,40(10):1763-1766.
Authors:LIU Yan  DONG Yun-shan  DAI Jia-wei  LI Ge-yang
Abstract:A series of Nb-Si-N composite films with different silicon contents were prepared in a gaseous mixture of Ar,N_2 and SiH_4 by the reactive magnetron sputtering method.EDS,XRD,TEM,AFM and a nanoindenter were employed to characterize these composite films' chemical composition,phase formation,microstructure and mechanical properties.The experimental results indicate that through controlling the SiH_4 partial pressure in the mixed gas,it is convenient to deposit Nb-Si-N films different in silicon contents by means of the reactive magnetron sputtering technique.A small addition of silicon will strengthen the film.Its hardness and elastic modulus respectively reach their highest values of 53 GPa and 521 GPa when silicon content arrives at 3.4%.With a further increase of silicon content in the film,its mechanical properties decrease gradually.The enhancement of Nb-Si-N films' mechanical properties is relative to the increment of crystal defects.
Keywords:Nb-Si-N films  reactive sputtering  microstructure  mechanical properites
本文献已被 CNKI 维普 万方数据 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号