| 强流金属离子注入分布的模拟计算 |
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| 引用本文： | 姬成周,王安民.强流金属离子注入分布的模拟计算[J].北京师范大学学报(自然科学版),1992,28(3):323-328. |
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| 作者姓名： | 姬成周 王安民 |
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| 作者单位： | 北京师范大学低能核物理研究所，北京师范大学低能核物理研究所，北京师范大学低能核物理研究所 100875，北京新外大街，100875，北京新外大街，100875，北京新外大街 |
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| 摘 要： | 给出了一个计算强束流离子注入下杂质浓度分布的数学模型.利用有限差分法,给出了该模型的数值解及计算程序.用该程序对Mo,W等注入离子的浓度分布进行了数值计算,给出了部分结果并同实验结果进行了比较.
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| 关 键 词： | 浓度分布 离子注入 MEVVA源 |
A MODEL CALCULATION OF THE PROFILES OF HIGH CURRENT METAL ION IMPLANTS |
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| Ji Chengzhou Wang Anmin Zhang Tonghe.A MODEL CALCULATION OF THE PROFILES OF HIGH CURRENT METAL ION IMPLANTS[J].Journal of Beijing Normal University(Natural Science),1992,28(3):323-328. |
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| Authors: | Ji Chengzhou Wang Anmin Zhang Tonghe |
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| Abstract: | A mathematical model is proposed in order to calculate the concentration profiles of dopants when implanted by using a MEVVA ion source.On the basis of the method of finite difference,a computer program is accomplished to get numerical solution from the model.As examples,the profiles of Mo atoms implanted into A1 and H13 steel are simulated and compared accordingly with the measured ones. |
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| Keywords: | concentration profile radiation enhanced diffusion vacancy mechanism diffusion equation chemical reaction |
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