一种新型i 线化学增幅型光致抗蚀剂材料的制备及性质

将具有高酸解活性的酯缩醛聚合物与重氮萘醌磺酸酯配合, 组成正性化学增幅型光致抗蚀剂, 用于高感度化学增幅型i 线（365 nm）光致抗蚀剂. 实验结果表明: 在酸的作用下, 该类聚合物可分解为小分子片段; 与传统的光致抗蚀剂体系相比, 该体系用稀碱水显影时具有更高的溶解速率, 且可进一步提高感度, 可制作线宽小于
0.5 μm的图像.

Synthesis of a Novel Chemically Amplified Resist for i-Line Lithography

An ester acetal polymer with high acidolysis activity was combined with diazonaphthoquinone sulfonate to form a novel photoresist, which can be used as a chemically amplified i line (365 nm) photoresist with a highsensitivity. Under the action of acid, the polymer can be decomposed into smallmolecular fragments. Compared with the traditional photoresist system, it performs dissolution rate higher when developed with diluted alkali, and can further improve the sensitivity. And the image with linewidth less than 0.5 μm can be made.