| 不同掺杂元素对GaN基材料发光性能影响研究进展 |
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| 引用本文： | 赵君芙,邵桂雪,李天保,梁建,许并社.不同掺杂元素对GaN基材料发光性能影响研究进展[J].科技导报(北京),2011,29(9). |
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| 作者姓名： | 赵君芙 邵桂雪 李天保 梁建 许并社 |
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| 作者单位： | 太原理工大学材料科学与工程学院,新材料界面科学与工程教育部重点实验室,太原,030024 |
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| 基金项目： | 山西省回国留学人员科研项目，山西省回国留学人员重点科研资助项目 |
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| 摘 要： | 由于GaN材料本身具有的极大优越性,如大禁带宽度、高临界场强、高热导率、高载流子饱和速率、高异质结界面二维电子气浓度等,决定了GaN基材料及其器件在发光半导体材料领域中的重要地位,而高质量GaN的掺杂制备一直是研究者关注的热点.本文根据近几年国内外对掺杂GaN基材料的研究成果,总结概括了IIA族、过渡族以及稀土族元素对GaN的掺杂,分析讨论了不同掺杂元素对GaN基材料发光性能的影响,并以Mg掺杂GaN为例,对比了各种掺杂技术的优缺点.
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| 关 键 词： | IIA族金属掺杂 过渡族掺杂 稀土掺杂 光致发光 |
Effects of Various Dopant on Photoluminescence of GaN Based Materials |
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| ZHAO Junfu,SHAO Guixue,LI Tianbao,LIANG Jian,XU Bingshe.Effects of Various Dopant on Photoluminescence of GaN Based Materials[J].Science & Technology Review,2011,29(9). |
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| Authors: | ZHAO Junfu SHAO Guixue LI Tianbao LIANG Jian XU Bingshe |
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| Institution: | ZHAO Junfu,SHAO Guixue,LI Tianbao,LIANG Jian,XU Bingshe Key Laboratory of Interface Science and Engineering in Advanced Materials,Ministry of Education,College of Material Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China |
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| Abstract: | Gallium Nitride(GaN)-based materials have great advantages,such as direct and large band-gap,high critical field strength and thermal conductivity,high carrier saturation velocity,and high mobility and concentration of two-dimensional electron gas at hetero-junction interface,the advantages determine that the GaN-based materials and devices play an important role in the area of light-emitting semiconductor materials.Thus,the preparation of high quality GaN-based materials doped with various elements has bec... |
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| Keywords: | GaN |
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