Electrodeposition and characterization of thermoelectric Bi2Se3 thin films |
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Authors: | Xiao-long Li Ke-feng Cai Hui Li Ling Wang Chi-wei Zhou |
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Affiliation: | (1) Dept. of Chemical Sciences School of Chemical Engineering, National Technical University of Athens, Heroon Polytechniou Str. 9, Zographos Campus, 157 73 Athens, Greece |
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Abstract: | Bi2Se3 thin films were electrochemically deposited on Ti and indium tin oxide-coated glass substrates, respectively, at room temperature, using Bi(NO3)3·5H2O and SeO2 as starting materials in diluted HNO3 solution. A conventional three-electrode cell was used with a platinum sheet as a counter electrode, and a saturated calomel electrode was used as a reference electrode. The films were annealed in argon atmosphere. The influence of cold isostatic pressing before annealing on the microstructure and thermoelectric properties of the films was investigated. X-ray diffraction analysis indicates that the film grown on the indium tin oxide-coated glass substrate is pure rhombohedral Bi2Se3, and the film grown on the Ti substrate consists of both rhombohedral and orthorhombic Bi2Se3. |
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