| 绝缘栅控PIN二极管型晶闸管的研究 |
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| 引用本文： | 蔡军 Sin,JKO.绝缘栅控PIN二极管型晶闸管的研究[J].中国科学技术大学学报,1998,28(1):68-73. |
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| 作者姓名： | 蔡军 Sin JKO |
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| 作者单位： | 中国科学技术大学基础物理中心，香港科学技术大学 |
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| 摘 要： | 设计了一种新颖的绝缘栅控ＰＩＮ二极管型晶闸管（ＩＧＰＤＴ）．此结构绝缘栅ＰＩＮ二极管被用来有效地控制晶闸管的开启及关断．通过二维数值模拟研究了ＩＧ－ＰＤＴ的通导特性及开关特性．结果显示ＩＧＰＤＴ有与槽栅基区电阻控制晶闸管（ＴＢＲＴ）类似的导通特性，其栅控电流关断能力达几百Ａ／ｃｍ２，且电阻负载的开关速度是ＴＢＲＴ的三倍多．
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| 关 键 词： | 绝缘栅控，PIN二极管，晶闸管 |
Research on the Insulated Gate P I N Diode Controlled Thyristor Structure |
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| Cai Jun,Wang Kelin,Johnny K. O. Sin.Research on the Insulated Gate P I N Diode Controlled Thyristor Structure[J].Journal of University of Science and Technology of China,1998,28(1):68-73. |
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| Authors: | Cai Jun Wang Kelin Johnny K O Sin |
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| Abstract: | A new Insulated Gate PIN Diode Controlled Thyristor (IGPDT) structure is reported. In this structure, an insulated gate PIN diode is used to effectively control the turn on and turn off of a thyristor. On state and turn off characteristics of the IGPDT are studied using two dimensional numerical simulations.Results show that the IGPDT achieves similar on state characteristics compared to those of the Trench Base Resistance Controlled Thyristor (TBRT), and also provides gate turn off capability up to current densities of several hundred amperes per cm2. However, resistive switching turn off speed of the IGPDT is approximately 3 times faster than that of the TBRT. |
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| Keywords: | insulted gate control PIN diode thyristor |
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