| 半导体材料科学和等离子体物理学中的流体动力学模型 |
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| 引用本文： | 王术. 半导体材料科学和等离子体物理学中的流体动力学模型[J]. 河南大学学报(自然科学版), 2002, 32(4): 1-13 |
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| 作者姓名： | 王术 |
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| 作者单位： | 河南大学,数学与信息科学学院,河南,开封,475001 |
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| 基金项目： | 国家自然科学基金，奥地利国家自然科学基金 |
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| 摘 要： | 介绍半导体材料科学和等离子体物理学中的电子输运流体动力学模型的最新进展。首先介绍各种数学模型及相庆的数学理论研究课题，然后给出等熵（shang）或非等熵（shang），一维或高维流体动力学模型适定性及大时间渐近性方面的数学分析结果。
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| 关 键 词： | 流体动力学模型 半导体装置 渐近行为 整体光滑解 |
A Survey on Hydrodynamic Models for Semiconductors and Plasma Physics |
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| Abstract. A Survey on Hydrodynamic Models for Semiconductors and Plasma Physics[J]. Journal of Henan University(Natural Science), 2002, 32(4): 1-13 |
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| Authors: | Abstract |
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| Abstract: | In this paper, we give a survey of the recent progress on the hydrodynamic models for semiconductors and plasma physics. A model hierarchy of macroscopic equations for semiconductors and plasma physics is presented. The results of the rigorous mathematical analysis of the asymptotic behaviors to the initial boundary value problem and the Cauchy problem for the one-dimensional and multi-dimensional isentropic and nonisentropic hydrodynamic models are given. The material comes from the recent joint works of Prof. L. Hsiao of Academy of Mathematics and Systems Sciences, Chinese Academy of Sciences, Prof. Peter A. Markowich of University of Vienna and the author. |
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| Keywords: | Hydrodynamic model semiconductors asymptotic behavior global smooth solution |
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