| 砷化镓-氧化硅界面特性研究 |
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| 引用本文： | 盛箎,任云珠.砷化镓-氧化硅界面特性研究[J].应用科学学报,1989,7(1):52-56. |
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| 作者姓名： | 盛箎 任云珠 |
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| 作者单位： | 复旦大学 |
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| 摘 要： | 本文报道了用真空蒸发法在砷化镓上淀积一氧化硅.在蒸发过程中保持砷化镓表面温度低于150℃.可获得低损伤的砷化镓-一氧化硅界面.
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| 收稿时间： | 1986-01-13 |
| 修稿时间： | 1986-05-15 |
THE ELECTRICAL CHARACTERISTICS OF GaAs-SiO INTERFACE FABRICATED RY LOW TEMPERATURE PROCESS |
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| SHENG CHI,REN YUNZHU.THE ELECTRICAL CHARACTERISTICS OF GaAs-SiO INTERFACE FABRICATED RY LOW TEMPERATURE PROCESS[J].Journal of Applied Sciences,1989,7(1):52-56. |
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| Authors: | SHENG CHI REN YUNZHU |
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| Institution: | Fudan University |
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| Abstract: | A low-temperature process for producing the GaAs MIS structure based on the slow evaporation of powder SiO on the room-temperature GaAs substrate is developed. The as-grown GaAs-SiO MIS has a low interface state density of 8×1011/cm2·eV and a low hysteresis. No frequency dispersion of the accumulation capacitance is found, as explained by the frequency-dependent permittivity of SiO. |
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