| MOS/双极高压复合结构中可控硅效应的抑制 |
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| 引用本文： | 谢世健,朱静远,张会珍.MOS/双极高压复合结构中可控硅效应的抑制[J].东南大学学报(自然科学版),1988(4). |
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| 作者姓名： | 谢世健 朱静远 张会珍 |
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| 作者单位： | 南京工学院微电子中心，南京工学院微电子中心，南京工学院微电子中心 |
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| 摘 要： | 本文分析了具有偏置栅又有延伸源场极的高压MOS结构和双极型器件复合结构中产生可控硅效应的机理,从而得出如何在材料、几何结构和工艺参数上采取措施,抑制和防止可控硅效应的产生。
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Strategy to Suppress the Latch-up Effect in High Voltage BIMOS Transistor Structures |
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| Xie Shijian Zhu Jingyuan Zhang Huizhen.Strategy to Suppress the Latch-up Effect in High Voltage BIMOS Transistor Structures[J].Journal of Southeast University(Natural Science Edition),1988(4). |
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| Authors: | Xie Shijian Zhu Jingyuan Zhang Huizhen |
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| Institution: | Microelectronic Center |
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| Abstract: | The latchup mechanism in bipolar/MOS combined transistor structures is analysed. In particular, the measures to prevent latch-up effects in the high voltage device structure composed of a bipolar transistor and a MOS structure with an offset gate and an extended source field plate are investigated. |
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| Keywords: | combined structures latch-up mechanism measures to prevent |
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