| 用光学方法测量半导体禁带宽度的温度系数 |
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| 引用本文： | 马全喜.用光学方法测量半导体禁带宽度的温度系数[J].河北大学学报(自然科学版),1993(3). |
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| 作者姓名： | 马全喜 |
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| 作者单位： | 河北大学物理系 |
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| 摘 要： | 本文提出了一种测量半导体禁带宽度温度系数的方法,推导出一个求dEg/dT的公式。利用这一公式,在室温附近测量计算了砷化镓单晶的禁带宽度温度系数,得到结果为-3.97×10~(-4)ev/k,这与人们公认的-3.95×10~(-4)ev/k极其接近,说明作为一种基本测量方法,是切实可行的。
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| 关 键 词： | 半导体 禁带宽度 温度系数 |
The Measurement of Temperature-coefficients of Semi-conductor Energy-gap by Optics Method |
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| Ma Quanxi.The Measurement of Temperature-coefficients of Semi-conductor Energy-gap by Optics Method[J].Journal of Hebei University (Natural Science Edition),1993(3). |
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| Authors: | Ma Quanxi |
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| Institution: | Department of physics |
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| Abstract: | This paper put forward a metnod to measuring temerature-coefficients of Semi-conductor
energy gap. We have deduced a solution for dEg/dT and measured the numerical value of dEg / dT for monocrystal GaAs about ambient temperature by using this solution. The received result is the value-3.97× 10-4 ev/k which is very close to the general acknowledg ement value -3.95 × 10-4ev / k. |
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| Keywords: | semi-conductor monocvystal enevgy gap temperature-coefficients |
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