| 硅与反应溅射二氧化硅界面特性的研究 |
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| 引用本文： | 张翔九,胡际璜,黄维宁,姜国宝. 硅与反应溅射二氧化硅界面特性的研究[J]. 应用科学学报, 1983, 1(4): 313-318 |
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| 作者姓名： | 张翔九 胡际璜 黄维宁 姜国宝 |
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| 作者单位： | 复旦大学现代物理研究所 |
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| 摘 要： | 本文对反应溅射SiO2薄膜作了红外光谱研究,发现反应溅射法所获得的SiO2薄膜中,硅与氧的反应并不完全.我们认为这是造成它与硅之间界面态密度升高的原因之一.为了改善Si与反应溅射SiO2薄膜的界面特性,将溅射在硅片上的SiO2薄膜,在含CCl4的气氛中于950℃温度下进行氧化与退火处理.结果使Si-SiO2的界面特性大大改善,对于n型(100)晶向的硅片其界面态密度下降到5.3×1010cm-2·V-1.以此SiO2薄膜作为栅,成功地制出了MOS场效应晶体管.
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| 收稿时间： | 1982-08-30 |
INVESTIGATIONS OF THE CHARACTERISTICS OF THE INTERFACE BETWEEN SI AND REACTIVELY R.F.SPUTTERED SiO2 |
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| ZHANG XIANGJIU,HU JIHUANG,HUANG WEINING,JIANG GUOBAO. INVESTIGATIONS OF THE CHARACTERISTICS OF THE INTERFACE BETWEEN SI AND REACTIVELY R.F.SPUTTERED SiO2[J]. Journal of Applied Sciences, 1983, 1(4): 313-318 |
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| Authors: | ZHANG XIANGJIU HU JIHUANG HUANG WEINING JIANG GUOBAO |
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| Affiliation: | Modern Physios Institute, Fudan University |
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| Abstract: | The infrared spectrum of the reaotively E. F. sputtered SiO2 film ig studied in the present work and it has been discovered that the reaction of Si with oxygen during the sputtering is not complete. This might canse higher density of interfaoial states between Si and the sputtered SiO2. In order to improve the characteristics of the interface, the SiO2 film sputtered on the Si wafer is oxidized and annealed in an ambient of nitrogen contained CCl4 at 950℃. As a result, the characteristics of the interface are greatly improved and the interface state density is reduced to 5.3×1010/cm2. v for the ntype silicon wafer with (100) orientation. MOS transistors can be made using this kind of SiO2 film as the gate. |
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