| 用深能级瞬态谱技术研究MOS结构界面态的分布 |
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| 引用本文： | 沈桂芬,高嵩,王正荣,张九惠.用深能级瞬态谱技术研究MOS结构界面态的分布[J].辽宁大学学报(自然科学版),1993(2). |
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| 作者姓名： | 沈桂芬 高嵩 王正荣 张九惠 |
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| 作者单位： | 辽宁大学物理系，辽宁大学物理系，辽宁大学物理系，辽宁大学物理系 |
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| 摘 要： | 本文简述了深能级瞬态谱技术测量界面态分布的基本原理。在大量实验基础上给出典型MOS结构界面态分布的测试曲线与数据,对实验结果进行了有价值的分析。
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| 关 键 词： | 深能级瞬态谱 界面态 瞬态电容 俘获截面 |
The Study of Interface States Distribution of Mos Structure By Deep Level Transient Spectroscopy Technology |
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| Shen Guifen Gao Song Wang Zhengrong Zhang Jiuhui.The Study of Interface States Distribution of Mos Structure By Deep Level Transient Spectroscopy Technology[J].Journal of Liaoning University(Natural Sciences Edition),1993(2). |
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| Authors: | Shen Guifen Gao Song Wang Zhengrong Zhang Jiuhui |
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| Institution: | Shen Guifen Gao Song Wang Zhengrong Zhang Jiuhui Department of Pkysics,Liaoning University |
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| Abstract: | In this paper the essential principle of interface States distribution measured by deep level transient spectroscopy technology is briefly described. Based on a large number of measurementS, the cruves and data measured on interface states distribution of typical MOS Structure are given. The experimental results are significantly analyzed. |
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| Keywords: | Deep level lransient spectroscopy Interface states Transient electric capacity Capture section |
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