| 异质双栅结构LDMOS的物理建模和仿真 |
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| 引用本文： | 胡媛,代月花,陈军宁,柯导明,刘琦.异质双栅结构LDMOS的物理建模和仿真[J].中国科学技术大学学报,2007,37(11):1406-1411. |
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| 作者姓名： | 胡媛 代月花 陈军宁 柯导明 刘琦 |
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| 作者单位： | 安徽大学电子科学与技术学院,安徽合肥,230039 |
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| 摘 要： | 对一种采用新结构的LDMOS(lateral double diffused metal oxide semiconductor)器件建立了模型.该器件在LDMOS中采用异质双栅(dual material gate,DMG)结构,这样使得该器件(DMG-LDMOS)同时具有LDMOS和DMG MOSFET的特性和优点.给出了DMG-LDMOS中沟道区表面电势和电场的一维表达式,并在此基础上考虑了大驱动电压下引入的沟道载流子速度过冲效应的影响,建立了基于物理的沟道电流模型.最后比较了Medici器件仿真结果和所建立的沟道电流模型,验证了该模型的可用性.
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| 关 键 词： | 异质双栅场效应晶体管 速度过冲效应 漂移-扩散的扩展方程 LDMOS器件 |
| 文章编号： | 0253-2778（2007）11-1406-06 |
| 收稿时间： | 2006-09-26 |
| 修稿时间： | 2006-12-05 |
Modeling and simulation of dual material gate (DMG) structure LDMOS |
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| HU Yuan,DAI Yue-hua,CHEN Jun-ning,KE Dao-ming,LIU Qi.Modeling and simulation of dual material gate (DMG) structure LDMOS[J].Journal of University of Science and Technology of China,2007,37(11):1406-1411. |
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| Authors: | HU Yuan DAI Yue-hua CHEN Jun-ning KE Dao-ming LIU Qi |
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| Abstract: | A new device,dual material gate(DMG)lateral double diffused metal oxide semiconductor(LDMOS)was presented,which combined the advantages of LDMOS and DMG MOSFET.The expressions for the surface potential and electric field under the two poly-silicon gates were derived.Then,a modeling strategy for channel current was presented for the DMG-LDMOS,in which the velocity overshoot effect was included.Finally the modeling results were verified by comparing with simulation results obtained from the device simulator Medici. |
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| Keywords: | dual material gate field effect transistor(DMG MOSFET) velocity overshoot effect enhanced diffusion-drift equation LDMOS device |
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