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Differenc es between amorphous indium oxide thin films |
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| Authors: | D Bruce Buchholz Li Zeng Michael J Bedzyk and Robert PH Chang |
| Institution: | Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, USA;Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60209, USA;Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60210, USA;Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60211, USA |
| Abstract: | A series of 60 nm thick indium oxide thin-films, all amorphous as determined by x-ray diffraction, were found to have physical and electrical properties that depended on the temperature of deposition. The carrier mobility and film conductivity decreased with decreasing deposition temperature; the best electrical properties of high mobility and conductivity were observed at a deposition temperature just below the temperature at which crystalline fi lms formed. The density of the film also decreased withdeposition temperature from 7.2 g/cm3 at t501 C to 5.3 g/cm3 at 100 C. |
| Keywords: | Transparent conducting oxide Semiconductor Oxide Amorphous Deposition temperature |
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