首页 | 本学科首页   官方微博 | 高级检索  
     检索      


Band structur e design of semiconduc tors for enhanced photocatalytic activity: The case of TiO2
Authors:Hui Yan  Xudong Wang  Man Yao and Xiaojie Yao
Institution:School of Materials Science and Engineering, Dalian University of Technology, Dalian 116021, China;School of Materials Science and Engineering, Dalian University of Technology, Dalian 116022, China;School of Materials Science and Engineering, Dalian University of Technology, Dalian 116023, China;School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
Abstract:General strategies are proposed by passivated co-doping in present paper to improve the photocatalytic activity of semiconductors for degradation of environmental pollutants. The ideal band gap of semiconductors for enhancement of photocatalytic activity can be lowered to match with visible light absorption and the location of the Conduction Band (CB) should be raised to meet the reducing capacity. Then we apply the strategy to anatase TiO2. It is predicted that nonmetal–metal co-doping TiO2 can modify the catalyst band edges by raising the valence band (VB) edge significantly and making the CB edge increased 0.24 eV. Therefore, the band gap for co-doping system should be narrowed to about 2.72 eV. (N, Ta) is predicted to be the target donor–acceptor combination with the band gap of 2.71 eV, which red-shifts the TiO2 absorption edge to 457.6 nm in visible range. The band engineering principle will be fit to other wide-band-gap semiconductors for enhanced photocatalytic activity.
Keywords:Anatase TiO2  Photocatalytic activity  First principles calculation  Electronic properties  Co-doping
本文献已被 维普 ScienceDirect 等数据库收录!
点击此处可从《自然科学进展(英文版)》浏览原始摘要信息
点击此处可从《自然科学进展(英文版)》下载免费的PDF全文
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号