Influence of O2/Ar ratio on the properties of transparent conductive niobium-doped ZnO films |
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| Authors: | Feng Cao YiDing Wang KuiXue Liu JingZhi Yin BeiHong Long Li Li Yu Zhang XiaMei Chen |
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| Institution: | (1) State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China |
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| Abstract: | Niobium-doped ZnO transparent conductive films are deposited on glass substrates by radio frequency sputtering at 300°C. The
influence of O2/Ar ratio on the structural, electrical and optical properties of the as-deposited films is investigated by X-ray diffraction,
Hall measurement and optical transmission spectroscopy. The lowest resistivity of 4.0×10−4 Ω·cm is obtained from the film deposited at the O2/Ar ratio of 1/12. The average optical transmittance of the films is over 90%.
Supported by the High-Tech Research and Development Program of China (Grant Nos. 2007AA06Z112, 2007AA03Z446), Research Fund
for the Doctoral Program of Higher Education of China (Grant No. 20060183030), Science and Technology Office of Jilin Province
(Grant No. 20070709) and Bureau of Science and Technology of Changchun City (Grant No. 2007107) |
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| Keywords: | semiconductors electrical properties thin films transparent conductive oxides sputtering |
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