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Zn1-xCrxO稀磁半导体薄膜的制备及磁性研究
引用本文:陈霞,陈希明,李杰,张俊萍.Zn1-xCrxO稀磁半导体薄膜的制备及磁性研究[J].天津理工大学学报,2008,24(3).
作者姓名:陈霞  陈希明  李杰  张俊萍
作者单位:天津理工大学,电子信息与通信工程学院,天津,300191;天津市薄膜电子与通信器件重点实验室,天津,300191
摘    要:采用磁控交替溅射方法和真空退火处理制备了Zn1-xCrxO薄膜,利用全自动X射线衍射仪和物理性质测量仪对样品的结构、晶粒尺寸及磁性等进行了测量和标度,得到了具有室温磁性的掺Cr的氧化锌基稀磁半导体.

关 键 词:稀磁半导体  氧化锌  掺杂  磁控溅射法

Studies of preparation and magnetism in Cr-doped ZnO diluted magnetic semiconductors
CHEN Xia,CHEN Xi-ming,LI Jie,ZHANG Jun-ping.Studies of preparation and magnetism in Cr-doped ZnO diluted magnetic semiconductors[J].Journal of Tianjin University of Technology,2008,24(3).
Authors:CHEN Xia  CHEN Xi-ming  LI Jie  ZHANG Jun-ping
Abstract:In this paper Cr-doped zinc oxide(ZnO) thin films were prepared by magnetron sputtering and annealed in vacuum.The samples' structure,grain size and magnetism were further measured by X-ray diffraction and PPMS.The measure shows that the ZnO-based diluted magnetic semiconductors doped with Cr have room-temperature ferromagnetism.
Keywords:diluted magnetic semiconductor  ZnO  doping  magnetron sputtering
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