自偏置的多段曲率校正带隙基准源

典型的帶隙基准电压源电路是由CMOS工艺产生的具有负温度系数的寄生横向BJT的发射结电压VEB和具有正温度系数的热电压Vt相补偿产生零温度系数的基准帶隙电压源.但是VEB与温度不是线性关系， 因此VREF需要被校正.本文介绍了一种高精度自偏置多段二次曲率补偿的CMOS帶隙基准电压源.采用0.5 μm CMOS工艺、工作电压为3.3 V，该芯片室温下功耗为94 μW.设计在0 ℃~75 ℃有效温度系数达到了0.7 ppm/℃.

A self-bias cascode multi-range curvature compensated bandgap voltage reference

A typical bandgap voltage circuit is built up with the negative temperature coefficient of V_(EB) across the base-emitter of the parasitic BJT in CMOS process and the positive temperature coefficient of Vt. But the temperature dependence of V_(EB) is not linear, therefore, the V_(REF) need be corrected. In this paper, a high precision self-bias multi-range second order curvature compensated CMOS bandgap voltage reference has been described. The new proposed bandgap voltage reference is implemented in 0.5 μm CMOS technology and operates under 3.3 V supply voltage consuming 94 μW at room temperature. The effictive temperature coefficient of this circuit achieves 0.7 ppm/ in the temperature ranging from 0 ℃ to 75 ℃.