准同型相界钛酸铋钠基无铅铁电薄膜的制备及其性能研究

发展环境友好的传感器、存贮器及换能器用铁电与压电薄膜是当前的研究热点之一．采用脉冲激光沉积（PLD）的方法，通过优化制备工艺，引入La0.6Sr0．4CoO3（LSCO）作为缓冲层，在Pt／Ti／SiO2／Si衬底上制备了准同型相界组分掺杂微量Mn元素的Bi0.5Na0.5TiO3-BaTiO3 34薄膜，并对其相结构、微观形貌、铁电、介电等性能进行了研究．结果表明：该薄膜具有纯钙钛矿结构，结构致密，显示出良好的电性能，其中剩余极化可达到1．15×10-1C·m^-2，1kHz下薄膜的相对介电常数约1000．

Fabrication and electrical properties of BNT-based lead-free ferroelectric thin film with the composition around the morphotropic phase boundary

Development of ferroelectric and piezoelectric thin films for environmental-friendly sensors, memories and transducers applications is one of the current hot research topics. In present work, La0. 6 Sr0.4 CoO3 -buffered Mn-doped （Bi0.5 Na0.5 ）TiO3 - BaTiO3 thin film with the composition around the morphotropic phase boundary was grown on Pt/Ti/SiO2/Si substrates by pulsed laser deposition. Structure, ferroelectric and dielectric properties of the lead-free thin film were systematically investigated. Results indicate that the film exhibites polycrystalline and dense microstructure. Good ferroelectric and dielectric properties with the r average remnant polarization Pr of 1.15 ×10-1C/m2and dielectric constant ε33/80 of about 1000 under 1 kHz are obtained.