| 射频溅射a—Si：F,H中载流子的低温传导 |
| |
| 引用本文： | 李清山 马玉蓉. 射频溅射a—Si：F,H中载流子的低温传导[J]. 曲阜师范大学学报, 1992, 18(4): 67-70 |
| |
| 作者姓名： | 李清山 马玉蓉 |
| |
| 作者单位： | [1]曲阜师范大学物理系，山东曲阜273165 [2]中国科技大学物理系，安徽合肥230022 |
| |
| 摘 要： | 在300－77K温区内对射频溅射制备的a-Si:F,H薄膜样品作了直流电导测量，结果表明，当T＞200K时载流子的传导是以最近邻跳迁传导为主，而在77K＜T＜140K温区变程跳跃传导点了主要地位，费米能级附近的隙态密度约为10^20cm^-3eV^-1。
|
| 关 键 词： | a－Si：F H 射频溅射 薄膜 低温传导 载流子 |
CARRIER CONDUCTION AT LOW TEMPERATURE IN RADIO FREQUENCY SPUTTERED a-Si:F,H |
| |
| Abstract: | The dc conductivity in a-Si:F,H thin film prepared by radio frequency sputtering has been measured in the temperature range from 300K to 77K. It is found that when temperature is higher than 200K nearest-neighbour hopping conduction is predominant, while as temperature between 77K and 140K variable-range hopping is dominant. The density of states at Fermi level in the gap is about 10~(20)cm~(-3)ev(-1) |
| |
| Keywords: | a-Si:F H nearest-neighbour hopping conduction variable-range hopping conduction the density of states |
| 本文献已被 CNKI 维普 等数据库收录！ |
