多晶硅薄膜晶体管的电流和电容分析模型

提出一种用于电路模拟的基于表面势的多晶硅薄膜晶体管(poly-Si TFTs)的电流和电容分析模型.采用非迭代方法计算poly-Si TFTs表面势随端电压的变化,从而大大地提高了上述模型的计算效率.基于表面势的解析计算和薄层电荷方法,提出了包括小尺寸效应和翘曲效应的电流电压模型.同时,文中还提出了基于电荷的电容模型.电流和电容模型在线性区和饱和区都是连续和准确的,不需要没有物理意义的光滑处理.与实验数据的比较发现,模型和实验数据符合得较好,这也证明了所提出模型的准确性.并且,该模型适用于电路仿真器.

Analytical Current and Capacitance Models of Polysilicon Thin-Film Transistors

This paper presents a surface-potential-based analytical current and capacitance model of polysilicon thin-film transistors(poly-Si TFTs) for circuit simulation,in which the non-iterative numerical algorithm is adopted to calculate the surface potential of poly-Si TFTs as a function of terminal voltage,thus greatly enhancing the efficiency of the proposed model.Based on the analytical calculation of surface potential and the charge sheet approach,the current-voltage model considering both the small geometry effects and the kink effect is developed.Moreover,a charge-based gate capacitance model is derived.It is indicated that the current and capacitance model is continuous and accurate across the linear and saturation regions without any unphysical interpolation scheme.A comparison between the data obtained by the model and those by experiments shows that the results accord well with each other,which verifies the correctness of the proposed model.So,it can be concluded that the proposed model is suitable for the incorporation into circuit simulators.